Fabrication of resistive switching memory structure using double-sided-anodized porous alumina

Fabrication of resistive switching memory structure using double-sided-anodized porous alumina

Accepted Manuscript Fabrication of Resistive Switching Memory Structure using Double-SidedAnodized Porous Alumina Yoshitaka Morishita, Takaya Hosono, ...

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Accepted Manuscript Fabrication of Resistive Switching Memory Structure using Double-SidedAnodized Porous Alumina Yoshitaka Morishita, Takaya Hosono, Hiroto Ogawa PII: DOI: Reference:

S0038-1101(17)30130-2 http://dx.doi.org/10.1016/j.sse.2017.02.007 SSE 7195

To appear in:

Solid-State Electronics

Received Date: Revised Date: Accepted Date:

6 September 2016 6 January 2017 16 February 2017

Please cite this article as: Morishita, Y., Hosono, T., Ogawa, H., Fabrication of Resistive Switching Memory Structure using Double-Sided-Anodized Porous Alumina, Solid-State Electronics (2017), doi: http://dx.doi.org/ 10.1016/j.sse.2017.02.007

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