Rare earth-doped materials for photonics

Rare earth-doped materials for photonics

Materials Science and Engineering B105 (2003) 1 Preface Rare earth-doped materials for photonics The present issue of Materials Science and Enginee...

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Materials Science and Engineering B105 (2003) 1

Preface

Rare earth-doped materials for photonics

The present issue of Materials Science and Engineering B presents recent advances in the physics and applications of photonic materials based on rare earth doping. This area of intense research activity witnesses several important recent developments. The goal of this issue is to highlight the new developments and assess the current status of light emission at infrared and visible wavelengths from rare earth-doped materials and novel photonic applications that now appear possible. The papers were submitted during the last European Materials Research Society (EMRS) meeting held in Strasbourg from 10–13 June 2003. There have been two previous MRS symposia devoted to this field that were held in the USA in 1993 and 1996 and one EMRS symposium in 2000. The main application of this research has been a development of optical amplifiers and sources for telecommunications. Important contributions have been made to electroluminescent devices based on Er3+ -doped Si crystals. In the last few years, considerable research activity has taken place in doping wide band gap semiconductors, such as GaN and SiC, with Er3+ . This has led to a highly reduced thermal quenching of the infrared luminescence. Recently, other rare earth elements, such as Pr3+ , Eu3+ , Tb3+ , and Tm3+ have been used, yielding light emission at visible wavelengths. Green, red, and blue electroluminescence from devices based on GaN thin films doped with rare earth ions has been demonstrated. The EMRS symposium highlighted the status of light emission at infrared and visible wavelengths from many materials and assessed the novel photonic applications that are now within reach. It covered the most important issues related to physics and applications of rare earth-doped materials. Both direct- and indirect band gap host materials were treated and special attention was given to wide gap bulk

0921-5107/$ – see front matter © 2003 Elsevier B.V. All rights reserved. doi:10.1016/j.mseb.2003.08.003

materials and thin films. Fifteen invited speakers provided the current status of the research in this exciting field and allowed very fruitful discussions between optical spectroscopy and semiconductor communities. It was possible to find common words for addressing items such as cross sections and performance of devices. In addition to invited papers, 20 oral presentations contributed to the nine sessions ranging from phosphor materials to nanostructures through devices. Moreover, a thorough discussion was carried out during the poster session which presented forty four interesting reports in this field. Among these 85 contributions, 50 were judged, each by two referees, to be highly rated and worthy to be published in this Materials Science and Engineering B issue. This issue is organised into sections corresponding to the topical sessions of the symposium. The first one concerns phosphor materials. The papers corresponding to the device applications have been gathered in the second section. The increasing interest on rare earth-doped wide band gap materials is clearly shown by the contributions reported in the third section. The last section on nanostructures presents the latest progress which appears to indicate that devices based on silicon nanocrystals are probably to be available soon. R. Moncorgé P. Ruterana∗ J. Zavada LERMAT FRE CNRS No. 2149, ENSICAEN 6 Bd. Marechal Join, Caen Cedex 14050, France ∗ Corresponding author. Tel.: +33-2-31-45-26-53 fax: +33-2-31-45-26-60 E-mail address: [email protected] (P. Ruterana)